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Look Inside Science and Technology of Magnetic Oxides

Science and Technology of Magnetic Oxides

Volume 494

£30.99

Part of MRS Proceedings

  • Date Published: March 1998
  • availability: Available
  • format: Hardback
  • isbn: 9781558993990

£ 30.99
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  • With the developing progress of materials fabrication, it is possible to produce materials with exciting electronic and magnetic properties which may be candidates for future device applications. One key class of these materials is the metallic magnetic oxide systems. This book focuses on colossal magnetoresistance (CMR) materials, including manganites and cobalites. Transport and magnetic properties and their dependence on stress, growth conditions, stoichiometry and elemental composition are explored quite extensively. However, the large magnetic fields required to obtain the CMR effect have been perceived as a technological roadblock for commercialization of this phenomenon. This has motivated research aimed both at reducing the intrinsic field dependence as well as at developing novel device structures that will reduce the required effective field. Technologically useful devices will undoubtedly involve heterostructures. Since the magnetic and transport properties are extremely stress-dependent, CMR heterostructures will most likely involve other metallic or insulating oxide materials. Materials of interest include half-metallic ferromagnets, yttrium garnet materials and ferrites.

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    Product details

    • Date Published: March 1998
    • format: Hardback
    • isbn: 9781558993990
    • length: 360 pages
    • dimensions: 235 x 158 x 23 mm
    • weight: 0.7kg
    • availability: Available
  • Table of Contents

    Part I. Materials Processing of Metallic Magnetic Oxides
    Part II. Characterization of Metallic Magnetic Oxides
    Part III. Metallic Magnetic Oxide Theory and Devices
    Part IV. Metallic Magnetic Oxide Devices and Multilayers
    Part V. Physical Properties of Metallic Oxides
    Author index
    Subject index.

  • Editors

    Michael F. Hundley, Los Alamos National Laboratory

    Janice H. Nickel, Hewlett-Packard Laboratories, Palo Alto, California

    Ramamoorthy Ramesh, University of Maryland, College Park

    Yoshinori Tokura, University of Tokyo

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