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Look Inside Compound Semiconductors for Energy Applications and Environmental Sustainability — 2011

Compound Semiconductors for Energy Applications and Environmental Sustainability — 2011

Volume 1324

$111.00 (C)

Part of MRS Proceedings

Ruben Lieten, Mihir Tungare, Kasif Teker, Yuh-Jen Cheng, Takuma Nanjo, Shih-Pang Chang, Marta Kruszynska, Tamara Potlog, Helio Moutinho, Joel Duenow, Jaan Hiie, Christopher Exstrom, Jess Kaneshiro, Marcus Bär, Ingrid Repins, Jan Keller, Dowon Bae, R. Ernesto Ornelas A., Huan-hua Wang, Manuela Vieira, Yi Wang, Jinrong Cheng, Daniel Georgiev
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  • Date Published: November 2011
  • availability: Available
  • format: Hardback
  • isbn: 9781605113012

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  • Symposium D, “Compound Semiconductors for Energy Applications and Environmental Sustainability,” was held at the 2011 MRS Spring Meeting April 25-29 in San Francisco, California. Compound semiconductors have long been an integral part of everyday life. Many of these semiconductors exhibit direct band gaps that are tailorable over a wide range of energy. This property can be leveraged for many energy-related applications such as efficient lighting, high-efficiency solar cells, and efficient switching. Recent progress on their potential as emitters, sensing devices in biological and chemical environments, and high-efficiency power devices demonstrates their impact on conservation of energy and environment, and on mitigation of climate change. This volume contains reports from internationally known experts on the state of compound semiconductor-based devices with applications to environmental conservation and energy use reduction, challenges associated with realization of such devices, and obstacles to their widespread use.

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    Product details

    • Date Published: November 2011
    • format: Hardback
    • isbn: 9781605113012
    • length: 178 pages
    • dimensions: 229 x 152 x 11 mm
    • weight: 0.41kg
    • contains: 98 b/w illus. 21 tables
    • availability: Available
  • Table of Contents

    Part I. Nitrides:
    1. Indium gallium nitride on germanium by molecular beam epitaxy Ruben Lieten
    2. Crack-free III-nitride structures (> 3.5 µm) on silicon Mihir Tungare
    3. Comparison of aluminum nitride nanowire growth with and without catalysts via chemical vapor deposition Kasif Teker
    4. Enhanced light emission at self-assembled GaN inversion domain boundary Yuh-Jen Cheng
    5. AlGaN channel HEMT with extremely high breakdown voltage Takuma Nanjo
    6. Fabrication and optical properties of green emission semipolar {10-11} InGaN/GaN MQWs selective grown on GaN nanopyramid arrays Shih-Pang Chang
    Part II. CdTe/CdS:
    7. Morphology control of copper indium disulfide nanocrystals Marta Kruszynska
    8. Comparative study in thin-film CdTe solar cells with ZnSe/TCO and CdS/TCO buffer layers Tamara Potlog
    9. Influence of surface preparation on scanning Kelvin probe microscopy and electron backscatter diffraction analysis of cross sections of CdTe/CdS solar cells Helio Moutinho
    10. CdSxTe1-x alloying in CdS/CdTe solar cells Joel Duenow
    11. Influence of annealing in H2 atmosphere on the electrical properties of thin film CdS Jaan Hiie
    Part III. CIGS/CIS:
    12. Properties of CuIn1-xGaxSe2 films prepared by the rapid thermal annealing of spray-deposited CuIn1-xGaxS2 and Se Christopher Exstrom
    13. I-III-VI2 (copper chalcopyrite-based) thin films for a photoelectrochemical water-splitting tandem-hybrid photocathode Jess Kaneshiro
    14. Identification of impurity phases in Cu2ZnSnS4 thin-film solar cell absorber material by soft x-ray absorption spectroscopy Marcus Bär
    15. Kesterites and chalcopyrites: a comparison of close cousins Ingrid Repins
    16. Impact of thickness variation of the ZnO:Al window layer on optoelectronic properties of CIGSSe solar cells Jan Keller
    17. Fabrication of high efficiency flexible CIGS solar cell with ZnO diffusion barrier on stainless steel substrate Dowon Bae
    18. Copper indium diselenide thin films using a hybrid method of chemical bath deposition and thermal evaporation R. Ernesto Ornelas A.
    Part IV. III-V and Other Materials:
    19. The two origins of p-type conduction in transparent conducting Ga-doped SnO2 thin films Huan-hua Wang
    20. DEMUX SiC optical transducers for fluorescent proteins detection Manuela Vieira
    21. Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment Yi Wang
    22. Structure and photocatalytic property of Bi25FeO40 crystallites derived from the PEG assisted sol-gel methods Jinrong Cheng
    23. Zinc nitride films by reactive sputtering of Zn in N2-containing atmosphere Daniel Georgiev.

  • Editors

    L. Douglas Bell, Jet Propulsion Laboratory

    F. Shahedipour-Sandvik, University at Albany, State University of New York

    Kenneth A. Jones, U.S. Army Research Laboratory

    Daniel Schaadt, Universität Karlsruhe, Germany

    Blake S. Simpkins, Naval Research Laboratory

    Miguel A. Contreras

    Contributors

    Ruben Lieten, Mihir Tungare, Kasif Teker, Yuh-Jen Cheng, Takuma Nanjo, Shih-Pang Chang, Marta Kruszynska, Tamara Potlog, Helio Moutinho, Joel Duenow, Jaan Hiie, Christopher Exstrom, Jess Kaneshiro, Marcus Bär, Ingrid Repins, Jan Keller, Dowon Bae, R. Ernesto Ornelas A., Huan-hua Wang, Manuela Vieira, Yi Wang, Jinrong Cheng, Daniel Georgiev

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