Semiconductor Defect Engineering
Materials, Synthetic Structures and Devices
Volume 864
Part of MRS Proceedings
- Editors:
- S. Ashok, Pennsylvania State University
- J. Chevallier, CNRS, Meudon
- B. L. Sopori, National Renewable Energy Laboratory, Golden, Colorado
- M. Tabe, Shizuoka University, Japan
- P. Kiesel, Palo Alto Research Center, California
- Date Published: July 2005
- availability: Unavailable - out of print
- format: Hardback
- isbn: 9781558998179
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This book, first published in 2005, explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.
Customer reviews
17th Oct 2024 by UName-1155924
Really cool, it's my need that semiconductor defect, actually we are analyzing the failure symptom all the time, we need the technical support
Review was not posted due to profanity
×Product details
- Date Published: July 2005
- format: Hardback
- isbn: 9781558998179
- length: 632 pages
- dimensions: 229 x 152 x 35 mm
- weight: 1.01kg
- availability: Unavailable - out of print
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