Doping Engineering for Front-End Processing
Volume 1070
Part of MRS Proceedings
- Editors:
- B. J. Pawlak, NXP Semiconductors, Belgium
- M. L. Pelaz, Universidad de Valladolid, Spain
- M. Law, University of Florida
- K. Surugo, Toshiba Corporation, Japan
- Reprinted: June 2014
- Date Originally Published: October 2008
- availability: Available
- format: Paperback
- isbn: 9781107408548
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Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
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×Product details
- Reprinted: June 2014
- Date Originally Published: October 2008
- format: Paperback
- isbn: 9781107408548
- length: 336 pages
- dimensions: 229 x 152 x 18 mm
- weight: 0.45kg
- availability: Available
Table of Contents
Preface
Part I. Ultra Shallow Junctions I
Part II. Shallow Junction Contacting
Part III. Poster Session
Part IV. Ultra Shallow Junctions II
Part V. Solid Phase Epitaxial Regrowth
Part VI. Modeling and Simulation
Author index
Subject index.
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