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Look Inside Materials Science and Technology for Nonvolatile Memories

Materials Science and Technology for Nonvolatile Memories

Volume 1071

Part of MRS Proceedings

  • Reprinted: June 2014
  • Date Originally Published: July 2008
  • availability: Available
  • format: Paperback
  • isbn: 9781107408531

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  • Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.

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    Product details

    • Reprinted: June 2014
    • Date Originally Published: July 2008
    • format: Paperback
    • isbn: 9781107408531
    • length: 240 pages
    • dimensions: 229 x 152 x 13 mm
    • weight: 0.33kg
    • availability: Available
  • Table of Contents

    Preface
    Acknowledgments
    Part I. Advanced Flash Memory
    Part II. Oxide Resistive Switching Memory
    Part III. Organic Resistive Switching Memory
    Part IV. Nanoparticle-Based Organic Memory
    Part V. Organic Ferroelectric Memory
    Part VI. New Phase Change Memory and Deposition Methods
    Part VII. Future Explorative Memory Concepts
    Author index
    Subject index.

  • Editors

    Dirk J. Wouters, IMEC Leuven, Belgium

    Seungbum Hong, Argonne National Laboratory, Illinois

    Steven Soss, California Technology Center, California

    Orlando Auciello, Argonne National Laboratory, Illinois

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