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Look Inside Electromigration in Metals

Electromigration in Metals
Fundamentals to Nano-Interconnects

$99.99 (C)

Authors:
Paul S. Ho, University of Texas, Austin
Chao-Kun Hu, IBM T J Watson Research Center, New York
Martin Gall, GlobalFoundries
Valeriy Sukharev, Siemens Business

Date Published: September 2022
availability: In stock
format: Hardback
isbn: 9781107032385

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About the Authors

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
- Provides a comprehensive review of the topic, building up from fundamental physics to applications
- Explains methodologies for statistical analysis, from simple 1D to complex 3D models, which can be used for step-by-step development
- Utilises a multidisciplinary approach to explain electromigration as a physical phenomenon and its role as a major challenge in chip reliability
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Reviews & endorsements
'… useful for graduate students in materials science and mechanical or electrical engineering … Recommended.' J. Lambropoulos, Choice

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Product details
- Date Published: September 2022
- format: Hardback
- isbn: 9781107032385
- length: 430 pages
- dimensions: 250 x 174 x 24 mm
- weight: 0.98kg
- availability: In stock
Table of Contents
1. Introduction to electromigration
2. Fundamentals of electromigration
3. Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects
4. Stress evolution and damage formation in confined metal lines under electric stressing
5. Electromigration in Cu interconnect structures
6. Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects
Analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure
8. Massive scale statistical studies for electromigration
9. Assessment of electromigration damage in large on-chip power grids. Index.
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Authors
Paul S. Ho, University of Texas, Austin
Paul Ho is Professor Emeritus in the Department of Mechanical Engineering and the Texas Materials Institute at the University of Texas at Austin. He has received research awards from the Electrochemical Society, IEEE, IITC and Semiconductor Industry Association, among others.
Chao-Kun Hu, IBM T J Watson Research Center, New York
Chao-Kun Hu has recently retired as a Research Staff Member in the Reliability Department at the T.J. Watson Research Center of IBM. He received IBM Corporate awards, IEEE Cledo Brunetti award, EDS Recognition and IITC Best Paper awards, and Invention of the Year NY Intellectual Property Law Association.
Martin Gall, GlobalFoundries
Martin Gall is the director of the U.S. Operations Reliability Engineering Department at GLOBALFOUNDRIES Inc. He is an IEEE TDMR editor and the recipient of an IEEE IITC Best Paper and SRC Mentor of the Year Award.
Valeriy Sukharev, Siemens Business
Valeriy Sukharev is principal engineer for Calibre Design Solutions, Siemens EDA, Siemens Digital Industries Software. He was a recipient of the 2014 and 2018 Mahboob Khan Outstanding Industry Liaison Award (SRC) and the Best Paper awards from ICCAD 2016, 2019 and 2020.